IndiumV3, Main, Repository, bibRecord, 003A77

Preliminary results of storage accelerated aging test on InP/InGaAs DHBT

Identifieur interne : 003A77 ( Main/Repository ); précédent : 003A76; suivant : 003A78

Preliminary results of storage accelerated aging test on InP/InGaAs DHBT

Auteurs : RBID : Pascal:10-0478753

Descripteurs français

Pascal (Inist)
- Essai vieillissement accéléré, Transistor bipolaire hétérojonction, Fiabilité, Circuit intégré ultra rapide, Essai vieillissement, Méthode essai, Collecteur, Dopage, Planarisation, Endommagement, Jonction émetteur base, Défaillance, Conception assistée, Phosphure d'indium, Composé binaire, Conception circuit, InP.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Accelerated aging test, Aging test, Base emitter junction, Binary compound, Circuit design, Collector, Computer aided design, Damaging, Doping, Failures, Heterojunction bipolar transistors, Indium phosphide, Planarization, Reliability, Test method, Very high speed integrated circuits.

Abstract

We report on the reliability of InP HBT technology which has applications in very high-speed ICs. This work presents the storage accelerated aging tests results performed on InP/InGaAs HBT at stress temperatures of 180, 210 and 240 °C up to 3000 h. We have performed aging tests for two generations of InP HBT which differ from the collector doping level and from material used for planarization. From the Gummel plots, we note that the major degradation mechanism is located at the base-emitter junction periphery. Investigations on the physical origin of the observed failure mechanism has been performed using TCAD simulations.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 003B55

Links to Exploration step

Pascal:10-0478753

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Preliminary results of storage accelerated aging test on InP/InGaAs DHBT</title>
<author><name sortKey="Kone, G A" uniqKey="Kone G">G. A. Kone</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS, CNRS UMR 5818 - Université Bordeaux I-351, Cours de la liberation</s1>
<s2>33405 Talence</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Aquitaine</region>
<settlement type="city">Talence</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Grandchamp, B" uniqKey="Grandchamp B">B. Grandchamp</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS, CNRS UMR 5818 - Université Bordeaux I-351, Cours de la liberation</s1>
<s2>33405 Talence</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Aquitaine</region>
<settlement type="city">Talence</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Hainaut, C" uniqKey="Hainaut C">C. Hainaut</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS, CNRS UMR 5818 - Université Bordeaux I-351, Cours de la liberation</s1>
<s2>33405 Talence</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Aquitaine</region>
<settlement type="city">Talence</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Marc, F" uniqKey="Marc F">F. Marc</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS, CNRS UMR 5818 - Université Bordeaux I-351, Cours de la liberation</s1>
<s2>33405 Talence</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Aquitaine</region>
<settlement type="city">Talence</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Maneux, C" uniqKey="Maneux C">C. Maneux</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS, CNRS UMR 5818 - Université Bordeaux I-351, Cours de la liberation</s1>
<s2>33405 Talence</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Aquitaine</region>
<settlement type="city">Talence</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Labat, N" uniqKey="Labat N">N. Labat</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS, CNRS UMR 5818 - Université Bordeaux I-351, Cours de la liberation</s1>
<s2>33405 Talence</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Aquitaine</region>
<settlement type="city">Talence</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Zimmer, T" uniqKey="Zimmer T">T. Zimmer</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS, CNRS UMR 5818 - Université Bordeaux I-351, Cours de la liberation</s1>
<s2>33405 Talence</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Aquitaine</region>
<settlement type="city">Talence</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Nodjiadjim, V" uniqKey="Nodjiadjim V">V. Nodjiadjim</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Alcatel-Thales III-V Lab, Route de Nozay</s1>
<s2>91461 Marcoussis</s2>
<s3>FRA</s3>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Godin, J" uniqKey="Godin J">J. Godin</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Alcatel-Thales III-V Lab, Route de Nozay</s1>
<s2>91461 Marcoussis</s2>
<s3>FRA</s3>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">10-0478753</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 10-0478753 INIST</idno>
<idno type="RBID">Pascal:10-0478753</idno>
<idno type="wicri:Area/Main/Corpus">003B55</idno>
<idno type="wicri:Area/Main/Repository">003A77</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0026-2714</idno>
<title level="j" type="abbreviated">Microelectron. reliab.</title>
<title level="j" type="main">Microelectronics and reliability</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Accelerated aging test</term>
<term>Aging test</term>
<term>Base emitter junction</term>
<term>Binary compound</term>
<term>Circuit design</term>
<term>Collector</term>
<term>Computer aided design</term>
<term>Damaging</term>
<term>Doping</term>
<term>Failures</term>
<term>Heterojunction bipolar transistors</term>
<term>Indium phosphide</term>
<term>Planarization</term>
<term>Reliability</term>
<term>Test method</term>
<term>Very high speed integrated circuits</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Essai vieillissement accéléré</term>
<term>Transistor bipolaire hétérojonction</term>
<term>Fiabilité</term>
<term>Circuit intégré ultra rapide</term>
<term>Essai vieillissement</term>
<term>Méthode essai</term>
<term>Collecteur</term>
<term>Dopage</term>
<term>Planarisation</term>
<term>Endommagement</term>
<term>Jonction émetteur base</term>
<term>Défaillance</term>
<term>Conception assistée</term>
<term>Phosphure d'indium</term>
<term>Composé binaire</term>
<term>Conception circuit</term>
<term>InP</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We report on the reliability of InP HBT technology which has applications in very high-speed ICs. This work presents the storage accelerated aging tests results performed on InP/InGaAs HBT at stress temperatures of 180, 210 and 240 °C up to 3000 h. We have performed aging tests for two generations of InP HBT which differ from the collector doping level and from material used for planarization. From the Gummel plots, we note that the major degradation mechanism is located at the base-emitter junction periphery. Investigations on the physical origin of the observed failure mechanism has been performed using TCAD simulations.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0026-2714</s0>
</fA01>
<fA02 i1="01"><s0>MCRLAS</s0>
</fA02>
<fA03 i2="1"><s0>Microelectron. reliab.</s0>
</fA03>
<fA05><s2>50</s2>
</fA05>
<fA06><s2>9-11</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Preliminary results of storage accelerated aging test on InP/InGaAs DHBT</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>21st European Symposium on the RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF 2010)</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>KONE (G. A.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>GRANDCHAMP (B.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>HAINAUT (C.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>MARC (F.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>MANEUX (C.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>LABAT (N.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>ZIMMER (T.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>NODJIADJIM (V.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>GODIN (J.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>BUSATTO (Giovanni)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>IANNUZZO (Francesco)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>IMS, CNRS UMR 5818 - Université Bordeaux I-351, Cours de la liberation</s1>
<s2>33405 Talence</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Alcatel-Thales III-V Lab, Route de Nozay</s1>
<s2>91461 Marcoussis</s2>
<s3>FRA</s3>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Dept. of Automation, Electromagnetism, Information Engineering and Industrial Mathematics (DAEIMI), University of Cassino, Via G. Di Biasio 43</s1>
<s2>03043 Cassino</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA15>
<fA20><s1>1548-1553</s1>
</fA20>
<fA21><s1>2010</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>9626</s2>
<s5>354000192440040710</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2010 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>12 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>10-0478753</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Microelectronics and reliability</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We report on the reliability of InP HBT technology which has applications in very high-speed ICs. This work presents the storage accelerated aging tests results performed on InP/InGaAs HBT at stress temperatures of 180, 210 and 240 °C up to 3000 h. We have performed aging tests for two generations of InP HBT which differ from the collector doping level and from material used for planarization. From the Gummel plots, we note that the major degradation mechanism is located at the base-emitter junction periphery. Investigations on the physical origin of the observed failure mechanism has been performed using TCAD simulations.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F04</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D03F06A</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Essai vieillissement accéléré</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Accelerated aging test</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Ensayo envejecimiento acelerado</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Transistor bipolaire hétérojonction</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Heterojunction bipolar transistors</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Fiabilité</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Reliability</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Fiabilidad</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Circuit intégré ultra rapide</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Very high speed integrated circuits</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Essai vieillissement</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Aging test</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Ensayo envejecimiento</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Méthode essai</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Test method</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Método ensayo</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Collecteur</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Collector</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Colector</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Dopage</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Doping</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Doping</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Planarisation</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Planarization</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Planarización</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Endommagement</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Damaging</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Deterioración</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Jonction émetteur base</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Base emitter junction</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Unión emisor base</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Défaillance</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Failures</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Fallo</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Conception assistée</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Computer aided design</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Concepción asistida</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>22</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>22</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>22</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Composé binaire</s0>
<s5>23</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Binary compound</s0>
<s5>23</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Compuesto binario</s0>
<s5>23</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Conception circuit</s0>
<s5>46</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Circuit design</s0>
<s5>46</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Diseño circuito</s0>
<s5>46</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>14</s5>
</fC07>
<fC07 i1="01" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>14</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>14</s5>
</fC07>
<fN21><s1>312</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010)</s1>
<s2>21</s2>
<s3>Monte Cassino Abbey, Gaeta ITA</s3>
<s4>2010-10-11</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 003A77 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 003A77 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:10-0478753
   |texte=   Preliminary results of storage accelerated aging test on InP/InGaAs DHBT
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Preliminary results of storage accelerated aging test on InP/InGaAs DHBT

Preliminary results of storage accelerated aging test on InP/InGaAs DHBT

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri